The electromechanical impedance spectroscopy method on thin plates at intermediate and high frequencies


  • Cristian Rugina Institute of Solid Mechanics of the Romanian Academy, Bucharest, Romania
  • Veturia Chiroiu Institute of Solid Mechanics of the Romanian Academy, Bucharest, Romania
  • Ligia Munteanu Institute of Solid Mechanics of the Romanian Academy, Bucharest, Romania


electromechanical impedance spectroscopy method, EMIS, EMI, E/M, structural health monitoring, SHM, piezoelectric wafer active sensor, PWAS


This paper present a study of the electro-mechanical impedance spectroscopy method (EMIS) used in structural health monitoring with piezoelectric wafer active sensors, with and without wire lead connections, bonded on thin plates, at intermediate and high frequencies. For simple geometries like circular piezoelectric wafer active sensor bonded to circular plates, a simplified 2D axisymmetric analytic model exist, and is briefly presented. However when cracks exist the 2D model could not be applied. Usually the low frequencies (10kHz-150kHz) are used in the EMIS method. A 3D finite element method is used to analyze ability of the EMIS method to evaluate the distance to the crack at intermediate (150kHz-300kHz) and high (300kHz-450kHz) frequencies. The influence of the asymmetry position on the wire lead piezoelectric wafer active sensors related to the crack at intermediate and high frequencies is also studied. Quantifications by classical damage metrics are done.


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